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TDA4862G Datasheet(PDF) 12 Page - Siemens Semiconductor Group |
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TDA4862G Datasheet(HTML) 12 Page - Siemens Semiconductor Group |
12 / 17 page TDA 4862 Semiconductor Group 12 1998-02-16 1) K = V ISENSE / (VMULTIN × (VVAOUT – VFB)) 2) Guaranted by design, not 100% tested in production. Multiplier Input bias current I BMULTIN – 1 – – µA– Dynamic voltage range MULTIN V AOUT V MULTIN V VAOUT 0 to 3 V FB to V FB + 1 0 to 4 V FB to V FB + 1.5 – – V V V VAOUT = 2.75 V V MULTIN = 1.0 V Multiplier gain 1) K 0.45 0.65 0.85 1/V V MULTIN = 2 V V VAOUT = VFB + 1 V Restart Timer Restart time delay t DLY 75 190 400 µs– Gate Driver Output voltage low state V GTDRVL – 0.8 1.8 –V V I GTDRV = 20 mA I GTDRV = 200 mA Output voltage high state V GTDRVH – 9.4 8.7 –V I GTDRV = – 20 mA I GTDRV = – 200 mA Output voltage active shut down V GTDRVU – 2.0 2.6 V I GTDRV = 50 mA V CC increasing: 0 < V CC < VCCH, V CC decreasing: 0 < V CC < VCCL Rise time 2) t r – 100 – – C GTDRV = 1 nF Fall time 2) t f –40 – – C GTDRV = 1 nF Electrical Characteristics (cont’d) Unless otherwise stated, V CC = 12 V, – 40 °C < Tj < 150 °C. Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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