This Data Sheet may be revised by subsequent versions

© 2003 Eon Silicon Solution, Inc.,

www.eonssi.com

or modifications due to changes in technical specifications.

2

EN29LV040A

Rev. E, Issue Date: 2011/10/27

da0.

FEATURES

• Fully compatible with EN29LV040

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations for high performance

3.3 volt microprocessors.

• High performance

- Access times as fast as 45 ns

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1

μA typical standby current (standard access

time to active mode)

• Flexible Sector Architecture:

- Eight 64 Kbyte sectors

- Supports full chip erase

- Individual sector erase supported

- Sector protection and unprotection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Single Sector and Chip Erase

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• triple-metal double-poly triple-well CMOS

Flash Technology

• Low Vcc write inhibit < 2.5V

cycle

• Package options

- 8mm x 14mm 32-pin TSOP (Type 1)

- 32-pin PLCC

- 32-pin PDIP

• Commercial and industrial Temperature

Range

GENERAL DESCRIPTION

The EN29LV040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized

as 524,288 bytes. Any byte can be programmed typically in 8µs. The EN29LV040A features 3.0V

voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT

states in high-performance microprocessor systems.

The EN29LV040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

EN29LV040A

4 Megabit (512K x 8-bit ) Uniform Sector,

CMOS 3.0 Volt-only Flash Memory