EN39LV010-70JIP datasheet(7/36 Pages) EON

Part #	EN39LV010-70JIP

Description	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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Manufacturer	EON [Eon Silicon Solution Inc.]

Direct Link	http://www.essi.com.tw

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This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

7

EN39LV010

Rev. C, Issue Date: 2011/10/27

provides internally generated program / erase pulses and verifies the programmed /erased cells’

margin. The host system can detect completion of a program or erase operation by reading the

DQ[7] (Data# Polling) and DQ[6] (Toggle) status bits.

The ‘Command Definitions’ section of this document provides details on the specific device

commands implemented in the EN39LV010.

Sector Protection/Unprotection

The hardware sector protection feature disables both program and erase operations in any sector. The

hardware sector unprotection feature re-enables both program and erase operations in previously

protected sectors.

Sector protection/unprotection is intended only for programming equipment. This method requires

VID be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This

method is described in a separate document called EN39LV010 Supplement, which can be obtained

by contacting a representative of Eon Silicon Solution, Inc.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. The device automatically

enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is

independent of the CE#, WE# and OE# control signals. Standard address access timings provide

new data when addresses are changed. While in sleep mode, output is latched and always available

to the system. ICC4 in the DC Characteristics table represents the automatic sleep more current

specification.

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