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MC10XS4200 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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MC10XS4200 Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
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10 / 60 page  Analog Integrated Circuit Device Data 10 Freescale Semiconductor 10XS4200 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED) Over-current Detection thresholds with CSNS_ratio bit = 1(CSR1) OCH1_1 OCH2_1 OCM1_1 OCM2_1 OCL1_1 OCL2_1 OCL3_1 18.3 11.7 7.2 4.4 3.0 2.0 0.96 22 14.0 8.7 5.3 3.6 2.4 1.2 26.5 16.3 10.1 6.2 4.2 2.8 1.44 A Output pin leakage Current in sleep state (positive value = outgoing) VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state) VHS,OFF = VPWR, device in sleep state (VPWR = 24 V max.) IOUT_LEAK – -40.0 – – +11 +5.0 µA Switch Turn-on threshold for Supply over-voltage (VPWR -GND) (see (13)) V D_GND(CLAMP) 58 – 66 V Switch turn-on threshold for Drain-Source over-voltage (measured at IOUT = 500 mA, see Figure 19) VDS(CLAMP) 58 – 66 V Current Sensing Ratio(14) CSNS_ratio bit = 0 (high current mode) CSNS_ratio bit = 1 (low current mode) CSR0 CSR1 – – 1/3000 1/1000 – – – Minimum measurable load current with compensated error (15) I_LOAD_MIN – – 100 mA CSNS leakage current in OFF state (CSNSx_en = 0, CSNS_ratio bit_x = 0) ICSR_LEAK -4.0 – +4.0 µA Systematic offset error (seeCurrent Sense Errors) I_LOAD_ERR_SYS – 11 – mA Random offset error I_LOAD_ERR_RAND -150 – 150 mA Notes: 13. Current Sense Ratio CSRx = ICSNS / IHS[x] 14. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS 15. See note (14), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation). Further accuracy improvements can be obtained by performing a 1- or 2 point calibration. Table 3. Static Electrical Characteristics (continued) Unless specified otherwise: 8.0 V ≤ V PWR ≤ 36 V, 3.0 V ≤ VDD ≤ 5.5 V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V. Typical values are average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise. parameter Symbol Min Typ Max Unit |
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