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RF-35A2 Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc |
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RF-35A2 Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc |
4 / 17 page 4 RF Device Data Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1(A+B) =80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 40 — W Pout @ 3 dB Compression Point (2) P3dB — 58 — W IMD Symmetry @ 18 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 25 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz Quiescent Current Accuracy over Temperature with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3) Stage 1 Stage 2 ∆IQT — — 1.5 5.0 — — % Gain Flatness in 60 MHz Bandwidth @ Pout =12 W Avg. GF — 0.2 — dB Gain Variation over Temperature (--30°Cto+85°C) ∆G — 0.028 — dB/°C Output Power Variation over Temperature (--30°Cto+85°C) ∆P1dB — 0.028 — dB/°C 1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. |
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Similar Description - RF-35A2 |
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