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RF-35A2 Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc

Part # RF-35A2
Description  RF LDMOS Wideband Integrated Power Amplifiers
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

RF-35A2 Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc

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4
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1(A+B) =80 mA, IDQ2A = 260 mA, VGS2B =
1.4 Vdc, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
40
W
Pout @ 3 dB Compression Point (2)
P3dB
58
W
IMD Symmetry @ 18 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
25
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
65
MHz
Quiescent Current Accuracy over Temperature
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3)
Stage 1
Stage 2
∆IQT
1.5
5.0
%
Gain Flatness in 60 MHz Bandwidth @ Pout =12 W Avg.
GF
0.2
dB
Gain Variation over Temperature
(--30°Cto+85°C)
∆G
0.028
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
∆P1dB
0.028
dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.


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