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MRF8S18210WGHSR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part # MRF8S18210WGHSR3
Description  RF Power Field Effect Transistors
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF8S18210WGHSR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

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MRF8S18210WHSR3 MRF8S18210WGHSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
17.8
29.2
7.0
--34.2
1960 MHz
17.8
28.2
7.0
--34.4
1995 MHz
18.1
27.6
7.1
--34.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point
≃ 210 Watts CW
1800 MHz
• Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
18.2
30.1
7.3
--35.1
1840 MHz
18.1
29.1
7.4
--35.4
1880 MHz
18.2
27.8
7.4
--35.9
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
125
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
239
1.44
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
Freescale Semiconductor
Technical Data
1805 MHz -- 1995 MHz
50 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S18210WHSR3
MRF8S18210WGHSR3
NI--880XS--2
MRF8S18210WHSR3
NI--880XS--2 GULL
MRF8S18210WGHSR3
Figure 1. Pin Connections
(Top View)
RFout/VDS
21
RFin/VGS
© Freescale Semiconductor, Inc., 2012. All rights reserved.


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