Electronic Components Datasheet Search |
|
MRF8S18210WGHSR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
|
MRF8S18210WGHSR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 18 page MRF8S18210WHSR3 MRF8S18210WGHSR3 1 RF Device Data Freescale Semiconductor, Inc. RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1930 MHz 17.8 29.2 7.0 --34.2 1960 MHz 17.8 28.2 7.0 --34.4 1995 MHz 18.1 27.6 7.1 --34.3 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW 1800 MHz • Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1805 MHz 18.2 30.1 7.3 --35.1 1840 MHz 18.1 29.1 7.4 --35.4 1880 MHz 18.2 27.8 7.4 --35.9 Features • Designed for Wide Instantaneous Bandwidth Applications • Designed for Wideband Applications that Require 40 MHz Signal Bandwidth • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 125 °C Operating Junction Temperature (2,3) TJ 225 °C CW Operation @ TC =25°C Derate above 25°C CW 239 1.44 W W/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Document Number: MRF8S18210WHS Rev. 0, 4/2012 Freescale Semiconductor Technical Data 1805 MHz -- 1995 MHz 50 W AVG., 30 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 NI--880XS--2 MRF8S18210WHSR3 NI--880XS--2 GULL MRF8S18210WGHSR3 Figure 1. Pin Connections (Top View) RFout/VDS 21 RFin/VGS © Freescale Semiconductor, Inc., 2012. All rights reserved. |
Similar Part No. - MRF8S18210WGHSR3 |
|
Similar Description - MRF8S18210WGHSR3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |