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MRF8S18260HR6 Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MRF8S18260HR6 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 14 page MRF8S18260HR6 MRF8S18260HSR6 3 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, 1805--1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 260 — W IMD Symmetry @ 100 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 21 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 64 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout =74 W Avg. GF — 0.4 — dB Gain Variation over Temperature (--30°Cto+85°C) ∆G — 0.011 — dB/°C Output Power Variation over Temperature (--30°Cto+85°C) (1) ∆P1dB — 0.01 — dB/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. |
Similar Part No. - MRF8S18260HR6 |
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Similar Description - MRF8S18260HR6 |
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