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MRF8S19260H Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF8S19260H Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 14 page MRF8S19260HR6 MRF8S19260HSR6 1 RF Device Data Freescale Semiconductor, Inc. RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD =30 Volts,IDQ = 1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1930 MHz 17.6 33.2 5.9 --36.0 1960 MHz 18.0 33.6 5.8 --35.7 1990 MHz 18.2 34.5 5.7 --34.6 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 245 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (2,3) TJ 225 °C CW Operation @ TC =25°C Derate above 25°C CW 291 1.48 W W/°C Table 2. Thermal Characteristics Characteristic Symbol Value (3,4) Unit Thermal Resistance, Junction to Case Case Temperature 85°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1990 MHz Case Temperature 91°C, 260 W CW(1),30Vdc,IDQ = 1600 mA, 1990 MHz RθJC 0.30 0.28 °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data 1930--1990 MHz, 74 W AVG., 30 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs MRF8S19260HR6 MRF8S19260HSR6 CASE 375I--04 NI--1230--8 MRF8S19260HR6 CASE 375J--03 NI--1230S--8 MRF8S19260HSR6 (Top View) RFoutA/VDSA Figure 1. Pin Connections RFoutB/VDSB RFinA/VGSA RFinB/VGSB VBWA N.C. VBWB 18 45 27 36 N.C. © Freescale Semiconductor, Inc., 2010, 2012. All rights reserved. |
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