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MRFE6VP61K25HSR6 Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MRFE6VP61K25HSR6 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 21 page MRFE6VP61K25HR6 MRFE6VP61K25HSR6 3 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 23.0 24.0 26.0 dB Drain Efficiency ηD 72.5 74.0 — % Input Return Loss IRL — --14 --10 dB Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage, VDD Result 230 Pulse (100 μsec, 20% Duty Cycle) >65:1 at all Phase Angles 1500 Peak (3 dB Overdrive) 50 No Device Degradation |
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