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MW7IC2020NT1 Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MW7IC2020NT1 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 17 page MW7IC2020NT1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS =65 Vdc, VGS =0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS =28 Vdc, VGS =0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS =1.5 Vdc, VDS =0 Vdc) IGSS — — 1 μAdc Stage 2 — On Characteristics Gate Threshold Voltage (VDS =10 Vdc, ID =75 μAdc) VGS(th) 1.0 2.0 3.0 Vdc Gate Quiescent Voltage (VDS =28 Vdc, IDQ2 = 230 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD =28 Vdc, IDQ2 = 230 mAdc, Measured in Functional Test) VGG(Q) 4.7 5.5 6.2 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID =0.75 Adc) VDS(on) 0.1 0.3 0.8 Vdc Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset. Power Gain Gps 31.0 32.6 36.0 dB Power Added Efficiency PAE 16.0 17.0 — % Adjacent Channel Power Ratio ACPR — --51.4 --47.0 dBc Input Return Loss IRL — --12 --10 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =40 mA, IDQ2 = 230 mA, Pout =2.4 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset. Frequency Gps (dB) PAE (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 32.6 16.8 7.7 --51.3 --14 2140 MHz 32.6 17.0 7.6 --51.4 --12 2170 MHz 32.4 17.0 7.5 --51.6 --11 Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =40 mA, IDQ2 = 230 mA, 2110--2170 MHz Bandwidth Characteristic Symbol Min Typ Max Unit Pout @ 1 dB Compression Point, CW P1dB — 20 — W IMD Symmetry @ 9 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 25 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 90 — MHz Quiescent Current Accuracy over Temperature (2) Stage 1 with2kΩ Gate Feed Resistors (--30 to 85°C) Stage 2 ∆IQT — — 0.00 3.70 — — % Gain Flatness in 60 MHz Bandwidth @ Pout =2.4 W Avg. GF — 0.2 — dB Gain Variation over Temperature (--30°Cto+85°C) ∆G — 0.045 — dB/°C Output Power Variation over Temperature (--30°Cto+85°C) ∆P1dB — 0.004 — dB/°C 1. Part internally input matched. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. (continued) |
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