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Q67006-A9207 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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Q67006-A9207 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 13 page  TLE 5226 G Semiconductor Group Page 1998-02-04 5 Electrical Characteristics Parameter and Conditions Symbol Values Unit VS = 4.8 to 18 V ; Tj = - 40 °C to + 150 °C (unless otherwise specified) min typ max 1. Power Supply (VS) Supply current (Outputs ON) IS 8mA Supply current (Outputs OFF) VENA = L, VSTBY = H IS 4mA Operating voltage VS 4.8 32 V Standby current VSTBY = L IS 10 µA 2. Power Outputs ON state resistance Channel 1,2 Tj = 25 ° C ID = 1A; VS ≥ 9.5 V Tj = 125°C 1 RDS(ON) 0.2 0.5 Ω ON state resistance Channel 3,4 Tj = 25 ° C ID = 1A; VS ≥ 9.5 V Tj = 125°C 1 RDS(ON) 0.35 0.75 Ω Z-Diode clamping voltage (OUT1...4) ID ≥ 100 mA VDS(AZ) 45 60 V Pull down resistor Tj = 25 °C VSTBY = H, VIN = L T j = -40 °C ...150°C RPD 14 10 20 26 40 k Ω Output leakage current VSTBY = L IDlk 20 µA Output on delay time 2 ID = 1 A Output off delay time 2 ID = 1 A Output on fall time 2 ID = 1 A Output off rise time 2 ID = 1 A Output off status delay time 2 ID = 1 A Output on status delay time 3 Overload switch-off delay time ton toff tfall trise t4 t5 tDSO 10 5 5 10 50 100 65 80 40 40 60 50 300 µs 3. Digital Inputs (IN1, IN2, IN3, IN4, ENA) Input low voltage VINL - 0.3 1.0 V Input high voltage VINH 2.0 6.0 V Input voltage hysteresis 3 VINHys 50 100 mV Input pull down current VIN = 5 V; VS ≥ 6.5 V I IN 10 30 60 µA Enable pull down current VENA = 5 V; VS ≥ 6.5 V I ENA 10 20 40 µA 4. Digital Status Outputs (ST1 - ST4) open Drain Output voltage low IST = 2 mA VSTL 0.5 V Leakage current high ISTH 10 µA 1 Measured on P-DSO-20 devices 2 See timing diagram, resitive load condition; V S ≥ 9 V 3 This parameter will not be tested but assured by design |
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