MCM69F819

9

MOTOROLA FAST SRAM

DC CHARACTERISTICS AND SUPPLY CURRENTS

Parameter

Symbol

Min

Typ

Max

Unit

Notes

Input Leakage Current (0 V

≤ Vin ≤ VDD)

Ilkg(I)

—

—

± 1

µA

Output Leakage Current (0 V

≤ Vin ≤ VDDQ)

Ilkg(O)

—

—

± 1

µA

AC Supply Current (Device Selected,

MCM69F819–7.5

All Outputs Open, Freq = Max)

MCM69F819–8

Includes VDD Only

MCM69F819–8.5

MCM69F819–11

IDDA

—

—

350

325

300

250

mA

1, 2, 3

CMOS Standby Supply Current (Device Deselected, Freq = 0,

VDD = Max, All Inputs Static at CMOS Levels)

ISB2

—

—

45

mA

4, 5

TTL Standby Supply Current (Device Deselected, Freq = 0,

VDD = Max, All Inputs Static at TTL Levels)

ISB3

—

—

50

mA

4, 6

Clock Running (Device Deselected,

MCM69F819–7.5

Freq = Max, VDD = Max,

MCM69F819–8

All Inputs Toggling at CMOS Levels)

MCM69F819–8.5

MCM69F819–11

ISB4

—

—

190

175

165

145

mA

4, 5

Static Clock Running (Device Deselected, Freq = Max,

VDD = Max, All Inputs Static at TTL Levels)

ISB5

—

—

95

mA

4, 6

Output Low Voltage (IOL = 2 mA) VDDQ = 2.5 V

VOL

—

—

0.7

V

Output High Voltage (IOL = – 2 mA) VDDQ = 2.5 V

VOH

1.7

—

—

V

Output Low Voltage (IOL = 8 mA) VDDQ = 3.3 V

VOL2

—

—

0.4

V

Output High Voltage (IOL = – 4 mA) VDDQ = 3.3 V

VOH2

2.4

—

—

V

NOTES:

1. Reference AC Operating Conditions and Characteristics for input and timing.

2. All addresses transition simultaneously low (LSB) then high (MSB).

3. Data states are all zero.

4. Device is deselected as defined by the Truth Table.

5. CMOS levels for I/O’s are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.

6. TTL levels for I/O’s are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.

Parameter

Symbol

Min

Typ

Max

Unit

Input Capacitance

Cin

—

4

5

pF

Input/Output Capacitance

CI/O

—

7

8

pF