1

3

2

PIN

10.2± 0.2

4.0± 0.3

2.6± 0.15

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forward

voltage

(I

)

(Note 1)

(I

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

90

100

10

125

21

25

28

32

35

42

63

70

30

35

40

45

50

60

90

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 10 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC ITO-220AB,molded plastic body

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

- 55 ---- + 150

- 55 ---- + 150

0.1

6.8

4.4

ITO-220AB

MBRF

MBRF

MBRF

MBRF MBRF

MBRF

MBRF MBRF

1030CT 1035CT 1040CT 1045CT 1050CT 1060CT 1090CT 10100CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

111

wheeling, and polarity protection applications.

Polarity: As m arked

Weight: 0.06ounce, 1.67 grams

15

6.0

V

0.70

0.84

0.70

-

0.80

0.85

0.57

0.95

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

3)

MBRF1030CT-MBRF10100CT

Schottky Barrier Rectifiers

Features

Mechanical Data

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mail:lge@luguang.cn