Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

CY7C2562XV18-366BZXC Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C2562XV18-366BZXC
Description  72-Mbit QDR짰 II Xtreme SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Download  27 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C2562XV18-366BZXC Datasheet(HTML) 8 Page - Cypress Semiconductor

Back Button CY7C2562XV18-366BZXC Datasheet HTML 4Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 5Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 6Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 7Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 8Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 9Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 10Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 11Page - Cypress Semiconductor CY7C2562XV18-366BZXC Datasheet HTML 12Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 27 page
background image
CY7C2562XV18, CY7C2564XV18
Document Number: 001-70204 Rev. *B
Page 8 of 27
Echo Clocks
Echo clocks are provided on the QDR II+ to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR II+. CQ is referenced with respect to K and CQ is
referenced with respect to K. These are free running clocks and
are synchronized to the input clock of the QDR II+. The timing
for echo clocks is shown in Switching Characteristics on page 22.
Valid Data Indicator (QVLD)
QVLD is provided on the QDR II+ to simplify data capture on high
speed systems. The QVLD is generated by the QDR II+ device
along with data output. This signal is also edge-aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
On-Die Termination (ODT)
These devices have an On-Die Termination feature for Data
inputs (D[x:0]), Byte Write Selects (BWS[x:0]), and Input Clocks (K
and K). The termination resistors are integrated within the chip.
The ODT range selection is enabled through ball R6 (ODT pin).
The ODT termination tracks value of RQ where RQ is the resistor
tied to the ZQ pin. ODT range selection is made during power-up
initialization. A LOW on this pin selects a low range that follows
RQ/3.33 for 175
< RQ < 350 (where RQ is the resistor tied
to ZQ pin)
A HIGH on this pin selects a high range that follows
RQ/1.66 for 175
< RQ < 250 (where RQ is the resistor tied
to ZQ pin). When left floating, a high range termination value is
selected by default. For a detailed description on the ODT
implementation, refer to the application note, On-Die Termination
for QDRII+/DDRII+ SRAMs.
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
100
s of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 100
s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in QDR I mode with one cycle latency and a longer
access time). For information, refer to the application note, PLL
Considerations in QDRII/DDRII/QDRII+/DDRII+.
Application Example
Figure 2 shows two QDR II+ used in an application.
Figure 2. Application Example
BUS MASTER
(CPU or ASIC)
DATA IN
DATA OUT
Address
Source K
Source K
Vt
Vt
Vt
R
R
D
A
K
SRAM #2
RQ = 250 ohms
ZQ
CQ/CQ
Q
K
RPS WPS BWS
D
A
K
SRAM #1
RQ = 250 ohms
ZQ
CQ/CQ
Q
K
RPS WPS BWS
RPS
WPS
BWS
CLKIN1/CLKIN1
R = 50ohms, Vt = V
/2
DDQ
R
ODT
ODT
ODT
R
CLKIN2/CLKIN2


Similar Part No. - CY7C2562XV18-366BZXC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C2561KV18 CYPRESS-CY7C2561KV18 Datasheet
845Kb / 29P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C2561KV18-400BZC CYPRESS-CY7C2561KV18-400BZC Datasheet
845Kb / 29P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C2561KV18-400BZI CYPRESS-CY7C2561KV18-400BZI Datasheet
845Kb / 29P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C2561KV18-400BZXC CYPRESS-CY7C2561KV18-400BZXC Datasheet
845Kb / 29P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C2561KV18-400BZXI CYPRESS-CY7C2561KV18-400BZXI Datasheet
845Kb / 29P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
More results

Similar Description - CY7C2562XV18-366BZXC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C2563XV18 CYPRESS-CY7C2563XV18 Datasheet
614Kb / 29P
   72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C1563XV18 CYPRESS-CY7C1563XV18_12 Datasheet
1Mb / 29P
   72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1562XV18 CYPRESS-CY7C1562XV18 Datasheet
869Kb / 29P
   72-Mbit QDR짰 II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1563XV18 CYPRESS-CY7C1563XV18 Datasheet
1Mb / 29P
   72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C25632KV18 CYPRESS-CY7C25632KV18 Datasheet
496Kb / 31P
   72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2262XV18 CYPRESS-CY7C2262XV18 Datasheet
478Kb / 29P
   36-Mbit QDR짰 II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2263XV18 CYPRESS-CY7C2263XV18 Datasheet
1Mb / 29P
   36-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C25632KV18 CYPRESS-CY7C25632KV18_13 Datasheet
496Kb / 31P
   72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2568XV18 CYPRESS-CY7C2568XV18_12 Datasheet
883Kb / 29P
   72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C2568XV18 CYPRESS-CY7C2568XV18 Datasheet
908Kb / 29P
   72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com