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CY14B104NA-ZS20XI Datasheet(PDF) 8 Page - Cypress Semiconductor |
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CY14B104NA-ZS20XI Datasheet(HTML) 8 Page - Cypress Semiconductor |
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8 / 26 page  CY14B104LA, CY14B104NA Document Number: 001-49918 Rev. *L Page 8 of 26 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................–65 C to +150 C Maximum accumulated storage time At 150 C ambient temperature .......................1000 h At 85 C ambient temperature ......................20 Years Ambient temperature with power applied ...........................................–55 C to +150 C Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V Voltage applied to outputs in high Z state ..................................... –0.5 V to VCC + 0.5 V Input voltage ........................................ –0.5 V to Vcc + 0.5 V Transient voltage (< 20 ns) on any pin to ground potential ................. –2.0 V to VCC + 2.0 V Package power dissipation capability (TA = 25 °C) ..................................................1.0 W Surface mount Pb soldering temperature (3 Seconds) .........................................+260 C DC output current (1 output at a time, 1s duration) .....15 mA Static discharge voltage (per MIL-STD-883, Method 3015) .......................... > 2001 V Latch up current .................................................... > 200 mA Operating Range Range Ambient Temperature VCC Industrial –40 C to +85 C 2.7 V to 3.6 V DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions Min Typ [15] Max Unit VCC Power supply 2.7 3.0 3.6 V ICC1 Average VCC current tRC = 20 ns tRC = 25 ns tRC = 45 ns Values obtained without output loads (IOUT = 0 mA) –– 70 70 52 mA mA mA ICC2 Average VCC current during STORE All inputs don’t care, VCC = Max Average current for duration tSTORE –– 10 mA ICC3 Average VCC current at tRC= 200 ns, VCC(Typ), 25 °C All inputs cycling at CMOS levels. Values obtained without output loads (IOUT = 0 mA). –35 – mA ICC4 Average VCAP current during AutoStore cycle All inputs don’t care. Average current for duration tSTORE ––5 mA ISB VCC standby current CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V). Standby current level after non-volatile cycle is complete. Inputs are static. f = 0 MHz. ––5 mA IIX[16] Input leakage current (except HSB) VCC = Max, VSS < VIN < VCC –1 – +1 A Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC –100 – +1 A IOZ Off-state output leakage current VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH or WE < VIL –1 – +1 A VIH Input HIGH voltage 2.0 – VCC + 0.5 V VIL Input LOW voltage Vss – 0.5 – 0.8 V VOH Output HIGH voltage IOUT = –2 mA 2.4 – – V VOL Output LOW voltage IOUT = 4 mA – – 0.4 V VCAP[17] Storage capacitor Between VCAP pin and VSS 61 68 180 F Notes 15. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested. 16. The HSB pin has IOUT = –2 µA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested. 17. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options. |
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