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CY14B101NA-ZS25XIT Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY14B101NA-ZS25XIT Datasheet(HTML) 9 Page - Cypress Semiconductor |
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9 / 29 page  CY14B101LA CY14B101NA Document Number: 001-42879 Rev. *O Page 9 of 29 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 C to +150 C Maximum accumulated storage time: At 150 C ambient temperature ...................... 1000 h At 85 C ambient temperature .................... 20 Years Maximum junction temperature ................................. 150 C Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V Voltage applied to outputs in High Z state .................................... –0.5 V to VCC + 0.5 V Input voltage ....................................... –0.5 V to VCC + 0.5 V Transient voltage (< 20 ns) on any pin to ground potential ................. –2.0 V to VCC + 2.0 V Package power dissipation capability (TA = 25 °C) ................................................. 1.0 W Surface mount Pb soldering temperature (3 Seconds) ......................................... +260 C DC output current (1 output at a time, 1s duration) .... 15 mA Static discharge voltage (per MIL-STD-883, Method 3015) ......................... > 2001 V Latch up current .................................................... > 200 mA Operating Range Range Ambient Temperature VCC Industrial –40 C to +85 C 2.7 V to 3.6 V DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions Min Typ [19] Max Unit VCC Power supply voltage 2.7 3.0 3.6 V ICC1 Average VCC current tRC = 20 ns tRC = 25 ns tRC = 45 ns Values obtained without output loads (IOUT = 0 mA) –– 70 70 52 mA mA mA ICC2 Average VCC current during STORE All inputs don’t care, VCC = Max Average current for duration tSTORE –– 10 mA ICC3 Average VCC current at tRC = 200 ns, VCC(Typ), 25 °C All inputs cycling at CMOS levels. Values obtained without output loads (IOUT = 0 mA) –35– mA ICC4 Average VCAP current during AutoStore cycle All inputs don’t care. Average current for duration tSTORE –– 5 mA ISB VCC standby current CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V). Standby current level after nonvolatile cycle is complete. Inputs are static. f = 0 MHz –– 5 mA IIX [20] Input leakage current (except HSB) VCC = Max, VSS < VIN < VCC –1 – +1 µA Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC –100 – +1 µA IOZ Off-state output leakage current VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH or WE < VIL –1 – +1 µA VIH Input HIGH voltage 2.0 – VCC + 0.5 V VIL Input LOW voltage VSS – 0.5 – 0.8 V VOH Output HIGH voltage IOUT = –2 mA 2.4 – – V VOL Output LOW voltage IOUT = 4 mA – – 0.4 V Notes 19. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested. 20. The HSB pin has IOUT = -2 µA for VOH of 2.4 V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested. |
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