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1N5711W Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1N5711W Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
1 / 2 page 1N5711W Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion Mechanical Data Case: SOD-123, Plastic Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SA Weight: 0.01 grams (approx. ) SOD-123 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol 1N5711W Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 V RMS Reverse Voltage VR(RMS) 49 V Maximum Forward Current IFM 15 mA Power Dissipation (Note 1) Pd 250 mW Thermal Resistance Junction to Ambient Air (Note 1) R θJA 600 K/W Operating and Storage Temperature Range TJ, TSTG -65 to + 175 OC Electrical Characteristics Type Number Symbol Min Typ Max Units Reverse Breakdown Voltage IR=10uA V(BR) 70 - - V Reverse Leakage Current VR=50V IR - - 200 nA Forward Voltage Drop IF=1.0mA IF=15mA VF 70 - - - 0.41 1.0 V Junction Capacitance VR=0, f=1.0MHz Cj - - 2.0 pF Reverse Recovery Time (Note 2) trr - - 1.0 nS Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100 Ω. 0.053(1.35) Max. 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.004(0.10) Max. 0.067(1.70) 0.055(1.40) 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) http://www.luguang.cn mail:lge@luguang.cn |
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