For general purpose applications

Case:JEDEC DO--35,glass case

Weight: Approx. 0.13 gram

(Ratings at 25

ambient temperature unless otherw ise specified)

Min.

UNITS

V

μA

V

pF

ns

K/W

Storage temperature range

Reverse breakdow n voltage

@ I

A

Symbols

V

R

ELECTRICAL CHARACTERISTICS

I

R

Thermal resistance junction to ambient air

0.6

VOLTAGE RANGE: 40 -- 20 V

CURRENT: 400 mW

DO - 35(GLASS)

mW

A

Peak reverse voltage

400

1)

Symbols

Polarity: Color band denotes cathode end

Junction tenperature

Pow er dissipation (Infinite Heat Sink)

ABSOLUTE RATINGS(LIMITING VALUES)

UNITS

V

fast switching and low logic level applications

Metal silicon schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,steering,biasing and coupling diodes for

Leakage current

Junction capacitance

Forw ard voltage drop @

I

F

=20mA

250

1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

Single cycle surge 60Hz sine w ave

5

50

15

I

F

=200mA

Max.

Typ.

10

0.37

-55 ---+ 150

125

SD103A

SD103B

SD103C

40

30

20

SD103A

SD103B

SD103C

40

30

20

-

-

-

-

-

-

-

-

-

-

-

-

Forward continuous current

350

m A

Dimensions in millimeters

SD103A-SD103C

Small Signal Switching Diodes

Features

Mechanical Data

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