DMN2015UFDE-13 datasheet(4/6 Pages) DIODES

Part #	DMN2015UFDE-13

Description	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 6 page

DMN2015UFDE

Datasheet number: DS35560 Rev. 9 - 2

4 of 6

www.diodes.com

July 2012

DMN2015UFDE

0.005

0.015

0.020

0.010

0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 7 On-Resistance Variation with Temperature

J

°

V=

V

I= 10A

GS

D

10

V=

V

I= 5A

GS

D

4.5

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

J

°

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.0

0

I= 1mA

D

I = 250µA

D

0

4

8

12

16

20

0

0.2

0.4

0.6

0.8

1.0

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

T= 25°C

A

10

1,000

0

5

10

15

20

f = 1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

C

iss

C

oss

Crss

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

45

50

Q

(nC)

g, TOTAL GATE CHARGE

Fig. 11 Gate Charge

V

= 10V

I=

A

DS

D

8.5

0.01

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 12 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

R

Limited

DS(on)

T

= 150°C

T = 25°C

J(max)

A

V

= 12V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

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