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bq24278RGER Datasheet(PDF) 4 Page - Texas Instruments |
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bq24278RGER Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 29 page  K ILIM I INLIM R ILIM = K ISET I CHARGE R ISET = bq24278 SLUSB04 – JUNE 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Circuit of Figure 2, VUVLO < VIN < VOVP AND VIN>VBAT+VSLP, TJ = 0°C–125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BATTERY CHARGER YFF pkg 37 57 Measured from BAT to SYS, RON(BAT-SYS) Internal battery charger MOSFET on-resistance m Ω VBAT = 4.2 V RGE pkg 50 70 TA = 25°C 4.179 4.2 4.221 VWARM < VTS < VCOOL 4.160 4.2 4.24 VBATREG Battery regulation voltage V TA = 25°C 4.04 4.06 4.08 VHOT < VTS < VWARM 4.02 4.06 4.1 ICHARGE Charge current programmable range 550 2500 mA TA = 0°C to 125°C, VWARM < VTS < VCOOL 400 490 560 KISET Programmable fast charge current factor A Ω TA = 0°C to 125°C, VCOLD < VTS < VCOOL 225 245 270 VBATSHRT Battery short threshold VBAT Rising 2.9 3.0 3.1 V VBATSHRThys Battery short threshold hysteresis VBAT Falling 100 mV IBATSHRT Battery short current VBAT < VBATSHRT 50.0 mA tDGL(BATSHRT) Deglitch time for battery short to fast charge transition 32 ms ICHARGE ≤ 1A 7 10 11.5 ITERM Termination charge current %ICHARGE ICHARGE >1A 8 10 11 Both rising and falling, 2-mV over-drive, tDGL(TERM) Deglitch time for charge termination 32 ms tRISE, tFALL = 100 ns VRCH Recharge threshold voltage Below VBATREG 120 mV tDGL(RCH) Deglitch time VBAT falling below VRCH, tFALL = 100 ns 32 ms IDETECT Battery detection current before charge done (sink current) 2.5 mA tDETECT Battery detection time 250 ms INPUT PROTECTION Maximum input current limit programmable range for IN IINLIM 1000 2500 mA input KILIM Maximum input current factor for IN input 238 251 264 A Ω VIN_DPM_IN VIN_DPM threshold programmable range for IN Input 4.2 10 V VDPM threshold 1.18 1.2 1.22 V VDRV Internal bias regulator voltage 5 5.2 5.45 V IDRV DRV Output current 10 mA VDO_DRV DRV Dropout voltage (VIN – VDRV) IIN = 1A, VIN = 5 V, IDRV = 10 mA 450 mV VUVLO IC active threshold voltage VIN rising 3.6 3.8 4.0 V VUVLO_HYS IC active hysteresis VIN falling from above VUVLO 150 mV VSLP Sleep-mode entry threshold, VIN-VBAT 2.0 V ≤ VBAT ≤ VOREG, VIN falling 0 40 100 mV VSLP_EXIT Sleep-mode exit hysteresis 2.0 V ≤ VBAT ≤ VOREG 40 100 160 mV Deglitch time for supply rising above VSLP+VSLP_EXIT Rising voltage, 2-mV over drive, tRISE = 100 ns 30 ms VOVP Input supply OVP threshold voltage IN, VIN Rising 10.3 10.5 10.7 V VOVP(HYS) VOVP hysteresis Supply falling from VOVP 100 mV VBAT threshold over VOREG to turn off charger during 1.025 × 1.05 × 1.075 × VBOVP Battery OVP threshold voltage V charge VBATREG VBATREG VBATREG % of VBOVP hysteresis Lower limit for VBAT falling from above VBOVP 1 VBATREG VBATUVLO Battery UVLO threshold voltage 2.5 V ILIMIT Cycle by Cycle current limit 4.1 4.9 5.6 A TSHUTDWN Thermal shutdown 10C Hysteresis 165 C TREG Thermal regulation threshold 120 C Safety Timer 324 360 396 min CE, CD, PG, CHG VIH Input high threshold 1.3 V VIL Input low threshold 0.4 V IIH High-level leakage current VCHG = VPG = 5 V 1 µA VOL Low-level output saturation voltage IO = 10 mA, sink current 0.4 V 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s) :bq24278 |
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