TSU5611

SCDS326A

– AUGUST 2011 – REVISED NOVEMBER 2011

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

SUMMARY OF TYPICAL CHARACTERISTICS

USB PATH

UART PATH

AUDIO PATH

MIC PATH

Number of switches

1

1

1

1

ON-state resistance (rON)

5

Ω

5

Ω

3

Ω

8.8

Ω

ON-state resistance match (

ΔrON)

1

Ω

1

Ω

1.1

Ω

N/A

ON-state resistance flatness (rON(flat))

0.24

Ω

0.24

Ω

0.1

Ω

0.5

Ω

Turn-on/turn-off time (tON/tOFF)

1 ms

1 ms

1 ms

1 ms

Bandwidth (BW)

830 MHz

830 MHz

788 MHz

573 MHz

OFF isolation (OISO)

–22 dB

–22 dB

–75 dB

–100 dB

Crosstalk (XTALK)

–40 dB

–40 dB

–50 dB

–50 dB

Total harmonic distortion (THD)

N/A

N/A

0.05%

0.0017%

Leakage current (INO(OFF)/INC(OFF))

100 nA

100 nA

100 nA

100 nA

Package options

YZP package, 0.5-mm pitch

APPLICATION BLOCK DIAGRAM

2

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© 2011, Texas Instruments Incorporated

Product Folder Link(s): TSU5611