OUT+

OUT-

RSSI_EB

VCC_IN

FILTER1/2

GND

RF

IN

TIA

Voltage Amplifier

AGCandDC

Offset

Cancellation

CML OutputBuffer

RSSI_IB

ToTIA

ToVoltage AmplifierandOutputBuffer

VCC_OUT

220 W

ONET8541T

SLLSE85A

– JULY 2011 – REVISED AUGUST 2011

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

BLOCK DIAGRAM

A simplified block diagram of the ONET8541T is shown in Figure 1.

The ONET8541T consists of the signal path, supply filters, a control block for dc input bias, automatic gain

control (AGC) and received signal strength indication (RSSI). The RSSI provides the bias for the TIA stage and

the control for the AGC.

The signal path consists of a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer. The

The dc input bias circuit and automatic gain control use internal low pass filters to cancel the dc current on the

input and to adjust the transimpedance amplifier gain. Furthermore, circuitry is provided to monitor the received

signal strength.

Figure 1. Simplified Block Diagram of the ONET8541T

2

Copyright

© 2011, Texas Instruments Incorporated