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ONET8541T Datasheet(PDF) 2 Page - Texas Instruments |
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ONET8541T Datasheet(HTML) 2 Page - Texas Instruments |
2 / 16 page OUT+ OUT- RSSI_EB VCC_IN FILTER1/2 GND RF IN TIA Voltage Amplifier AGCandDC Offset Cancellation CML OutputBuffer RSSI_IB ToTIA ToVoltage AmplifierandOutputBuffer VCC_OUT 220 W ONET8541T SLLSE85A – JULY 2011 – REVISED AUGUST 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BLOCK DIAGRAM A simplified block diagram of the ONET8541T is shown in Figure 1. The ONET8541T consists of the signal path, supply filters, a control block for dc input bias, automatic gain control (AGC) and received signal strength indication (RSSI). The RSSI provides the bias for the TIA stage and the control for the AGC. The signal path consists of a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer. The on-chip filter circuit provides a filtered VCC for the PIN photodiode and for the transimpedance amplifier. The dc input bias circuit and automatic gain control use internal low pass filters to cancel the dc current on the input and to adjust the transimpedance amplifier gain. Furthermore, circuitry is provided to monitor the received signal strength. Figure 1. Simplified Block Diagram of the ONET8541T 2 Copyright © 2011, Texas Instruments Incorporated |
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