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2MBI400VD-060-50 Datasheet(PDF) 4 Page - Fuji Electric |
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2MBI400VD-060-50 Datasheet(HTML) 4 Page - Fuji Electric |
4 / 6 page 4 IGBT Modules 2MBI400VD-060-50 http://www.fujielectric.com/products/semiconductor/ 5 Vcc=300V, VGE=±15V, RG=3.3Ω, Tj=150°C Transient Thermal Resistance (max.) Reverse Recovery Characteristics (typ.) Vcc=300V, VGE=±15V, RG=3.3Ω, Tj=125°C Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) 10 100 1000 0 200 400 600 800 1000 Forward current: IF [A] 0.001 0.01 0.1 1 0.001 0.01 0.1 1 Pulse Width : Pw [sec] FWD IGBT 0 200 400 600 800 1000 0 1 2 3 Forward on voltage: VF [V] 125°C Tj=25° trr lrr trr lrr 150°C 10 100 1000 0 200 400 600 800 1000 Forward current: IF [A] |
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