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FSL206MRBN Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSL206MRBN Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 14 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FSL206MR • Rev. 1.0.5 4 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Min. Max. Unit VSTR VSTR Pin Voltage -0.3 650.0 V VDS Drain Pin Voltage -0.3 650.0 V VCC Supply Voltage 26 V VLS LS Pin Voltage -0.3 Internally Clamped Voltage (4) V VFB Feedback Voltage Range -0.3 Internally Clamped Voltage (4) V IDM Drain Current Pulsed (5) 1.5 A EAS Single-Pulsed Avalanche Energy (6) 11 mJ PD Total Power Dissipation 1.3 W TJ Operating Junction Temperature -40 +150 °C TA Operating Ambient Temperature -40 +125 °C TSTG Storage Temperature -55 +150 °C ESD Human Body Model, JESD22-A114 4 KV Charged Device Model, JESD22-C101 2 Notes: 4. VFB is clamped by internal clamping diode (13V ICLAMP_MAX < 100μA). After shutdown, before VCC reaching VSTOP, VSD < VFB < VCC. 5. Repetitive rating: pulse-width limited by maximum junction temperature. 6. L=21mH, starting TJ=25°C. Thermal Impedance TA=25°C unless otherwise specified. Symbol Parameter Value Unit θJA Junction-to-Ambient Thermal Impedance (7) 93 °C/W Notes: 7. JEDEC recommended environment, JESD51-2 and test board, JESD51-10 with minimum land pattern for 8DIP and JESD51-3 with minimum land pattern for 8LSOP. |
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