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2MBI300VB-060-50 Datasheet(PDF) 3 Page - Fuji Electric |
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2MBI300VB-060-50 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 6 page 2 3 IGBT Modules 2MBI300VB-060-50 http://www.fujielectric.com/products/semiconductor/ +VGE=15V, -VGE=15V, RG=4.7Ω, Tj=150°C VCC=300V, VGE=±15V, RG=4.7Ω, Tj=125, 150°C VCC=300V, IC=300A, VGE=±15V, Tj=125, 150°C Switching loss vs. Gate resistance (typ.) Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=4.7Ω, Tj=125°C Switching loss vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) VCC=300V, IC=300A, VGE=±15V, Tj=125°C Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=4.7Ω, Tj=150°C 10 100 1000 10000 0 200 400 600 800 Collector current: IC [A] toff ton tr tf 10 100 1000 10000 1 10 100 Gate resistance: RG [Ω] toff ton tr tf 0 200 400 600 800 0 200 400 600 800 Collector-Emitter voltage: VCE [V] (Main terminals) 0 20 40 60 80 100 120 1 10 100 Gate resistance: RG [Ω] Eoff Err Eon Tj=125°C Tj=150°C 0 10 20 30 0 200 400 600 800 Collector current: IC [A] Eon Eoff Err Tj=125°C Tj=150°C 10 100 1000 10000 0 200 400 600 800 Collector current: IC [A] toff ton tr tf Reverse bias safe operating area (max.) |
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