TPS2456A

www.ti.com

SLVSBI8 – JULY 2012

RECOMMENDED OPERATING CONDITIONS

Over recommended junction temperature range and all voltages referenced to GND, unless otherwise noted.

MIN

TYP

MAX

UNIT

8.5

12

15

V

100

1000

µA

–1

1

µA

VINT bypass capacitance

1

100

250

nF

–40

125

°C

(1)

This condition applies to the PCB and is not a limit on the TPS2456A.

ELECTRICAL CHARACTERISTICS

Common conditions (unless otherwise noted) are: INA = INB = SENPA = SENPB = SENMA = SENMB = SETPA = SETPB =

–40°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Enable Input – ENx, ORENx

Threshold voltage

1.25

1.35

1.45

V

Hysteresis

20

50

80

mV

Pullup current

ENx = ORENx = 0 V, current sourcing

5

8

15

µA

Input bias current

ENx = ORENx = 17 V, current sinking

6

15

µA

20

µs

Power Good Output – PGx

Output low voltage

0.14

0.25

V

Leakage current

PGx = 17 V (sinking)

1

µA

Threshold voltage

10.2

10.5

10.8

V

Hysteresis

mV

Deglitch time

PGx falling

50

100

150

µs

Fault Output – FLTx

Output low voltage

0.14

0.25

V

Leakage current

1

µA

Bias Supply – VINT

Output voltage

2

2.3

2.8

V

Fault Timer – CTx

Sourcing current

7

10

13

µA

Upper threshold voltage

1.30

1.35

1.40

V

200

Ω

Timer start threshold

5

6

7

V

current

Channel Current Monitor – MONx

10.8 V

Input referred offset

–1.5

1.5

mV

MONx threshold

0.66

0.675

0.69

V

Leakage current

1

µA

(1)

Tested with HAT2156 MOSFET.

(2)

These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's

product warranty.

Copyright © 2012, Texas Instruments Incorporated

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Product Folder Link(s): TPS2456A