1

Motorola Thyristor Device Data

Thyristors

Silicon Controlled Rectifiers

. . . designed for back-to-back SCR output devices for solid state relays or applications

requiring high surge operation.

• Photo Glass Passivated Blocking Junctions for High Temperature Stability,

Center Gate for Uniform Parameters

• 400 Amperes Surge Capability

• Blocking Voltage to 800 Volts

Rating

Symbol

Value

Unit

Peak Repetitive Forward and Reverse Blocking Voltage(1)

(TJ = 25 to 125°C, Gate Open)

MCR264-4

MCR264-6

MCR264-8

MCR264-10

VDRM

VRRM

200

400

600

800

Volts

Forward Current (TC = 80°C)

(All Conduction Angles)

IT(RMS)

IT(AV)

40

25

Amps

Peak Non-repetitive Surge Current – 8.3 ms

(1/2 Cycle, Sine Wave)

1.5 ms

ITSM

400

450

Amps

Forward Peak Gate Power

PGM

20

Watts

Forward Average Gate Power

PG(AV)

0.5

Watt

Forward Peak Gate Current

(300

µs, 120 PPS)

IGM

2

Amps

Operating Junction Temperature Range

TJ

–40 to +125

°C

Storage Temperature Range

Tstg

–40 to +150

°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when

the device is to be used at high sustained currents.

REV 1

Order this document

by MCR264-4/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MCR2644

thru

MCR26410

CASE 221A-04

(TO-220AB)

STYLE 3

SCRs

40 AMPERES RMS

200 thru 800 VOLTS

K

G

A