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SiHG460B Datasheet(PDF) 1 Page - Vishay Siliconix |
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SiHG460B Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page IRFP460B, SiHG460B www.vishay.com Vishay Siliconix S12-0812-Rev. B, 16-Apr-12 1 Document Number: 91502 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 D Series Power MOSFET FEATURES •Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. APPLICATIONS • Consumer Electronics - Displays (LCD or Plasma TV) • Server and Telecom Power Supplies - SMPS • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers •SMPS - Power Factor Correction (PFC) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A. c. 1.6 mm from case. d. ISD ID, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 550 RDS(on) max. at 25 °C ()VGS = 10 V 0.25 Qg max. (nC) 170 Qgs (nC) 14 Qgd (nC) 28 Configuration Single N-Channel MOSFET G D S TO-247AC G D S ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP460BPbF Lead (Pb)-free and Halogen-free SiHG460B-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Gate-Source Voltage AC (f > 1 Hz) 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID 20 A TC = 100 °C 13 Pulsed Drain Currenta IDM 62 Linear Derating Factor 2.2 W/°C Single Pulse Avalanche Energyb EAS 281 mJ Maximum Power Dissipation PD 278 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Drain-Source Voltage Slope TJ = 125 °C dV/dt 24 V/ns Reverse Diode dV/dtd 0.36 Soldering Recommendations (Peak Temperature) for 10 s 300c °C |
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