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SIHP5N50D Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHP5N50D Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  SiHP5N50D www.vishay.com Vishay Siliconix S12-0690-Rev. A, 02-Apr-12 2 Document Number: 91489 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -1.2 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA - 0.58 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.5 A - 1.2 1.5 Forward Transconductancea gfs VDS = 20 V, ID = 2.5 A - 1.8 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 325 - pF Output Capacitance Coss -34 - Reverse Transfer Capacitance Crss -6 - Effective Output Capacitance, Energy Relatedb Co(er) VDS = 0 V to 400 V, VGS = 0 V -31 - Effective Output Capacitance, Time Relatedc Co(tr) -41 - Total Gate Charge Qg VGS = 10 V ID = 2.5 A, VDS = 400 V -10 20 nC Gate-Source Charge Qgs -3 - Gate-Drain Charge Qgd -5 - Turn-On Delay Time td(on) VDD = 400 V, ID = 2.5 A Rg = 9.1 , VGS = 10 V -12 24 ns Rise Time tr -11 22 Turn-Off Delay Time td(off) -14 28 Fall Time tf -11 22 Gate Input Resistance Rg f = 1 MHz, open drain - 1.7 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse P - N junction diode -- 5 A Pulsed Diode Forward Current ISM -- 20 Diode Forward Voltage VSD TJ = 25 °C, IS = 4 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 2.5 A, dI/dt = 100 A/μs, VR = 20 V - 320 - ns Reverse Recovery Charge Qrr -1.2 - μC Reverse Recovery Current IRRM -8 - A S D G |
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