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VCUT07B1-HD1-G4-08 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # VCUT07B1-HD1-G4-08
Description  Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2L
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VCUT07B1-HD1-G4-08 Datasheet(HTML) 2 Page - Vishay Siliconix

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VCUT07B1-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 31-May-12
2
Document Number: 84137
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT07B1-HD1:
The VCUT07B1-HD1 is a bidirectional and symmetrical (BiSy) ESD-protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT07B1-HD1 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients like an ESD-strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330
/150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010
20
30
40
Time (µs)
20 µs to 50 %
8 µs to 100 %
20548
12
14
16
8
10
12
4
6
0
2
- 8
- 6
- 4
- 2
0
2
4
6
8
f = 1 MHz
Pin 2 - 1
VR (V)
22630
IR (µA)
6
8
10
0
2
4
- 6
- 4
- 2
- 10
- 8
0.01
0.1
1
10
100
1000 10 000
Pin 2 - 1
22631


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