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MAGX-003135-SB5PPR Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc.

Part # MAGX-003135-SB5PPR
Description  GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MAGX-003135-SB5PPR Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc.

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GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-003135-120L00
Absolute Maximum Ratings
1,2,3,4,5
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. MACOM does not recommend sustained operation near these survivability limits.
3. For saturated performance, the following is recommended: (3*VDD + abs(VGG)) <175 V.
4. Operating at nominal conditions with TJ ≤ +200°C will ensure MTTF > 1 x 10
6 hours. Junction temperature directly affects device MTTF
and should be kept as low as possible to maximize lifetime.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)).
Typical Transient Thermal Resistances (IDQ = 300 mA, 300 μs pulse, 10% duty cycle):
a) Freq. = 3.1 GHz,
Ө
JC = 0.62C/W
TJ = 172C (TC = 82C, 48 V, 5.34 A, POUT = 120 W, PIN = 10.15 W)
b) Freq. = 3.3 GHz,
Ө
JC = 0.69C/W
TJ = 183C (TC = 83C, 48 V, 5.37 A, POUT = 120 W, PIN = 7.50 W)
c) Freq. = 3.5 GHz,
Ө
JC = 0.67C/W
TJ = 177C (TC = 84C, 48 V, 5.25 A, POUT = 120 W, PIN = 7.65 W)
Parameter
Limit
Input Power (PIN)
42 dBm
Drain Supply Voltage (VDD)
+65 V
Gate Supply Voltage (VGG)
-8 to 0 V
Supply Current (IDD)
6.7 A
Absolute Maximum Junction/Channel Temperature
200ºC
Pulsed Power Dissipation at 85 ºC
170 W (Pulse Width = 100
μs)
144 W (Pulse Width = 300
μs)
Operating Temperature
-
40 to +95ºC
Storage Temperature
-
65 to +150ºC
ESD Min. - Machine Model (MM)
50 V
ESD Min. - Human Body Model (HBM)
250 V


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