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VT1045CBP-M3-4W Datasheet(PDF) 2 Page - Vishay Siliconix |
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VT1045CBP-M3-4W Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page VT1045CBP www.vishay.com Vishay General Semiconductor Revision: 22-May-12 2 Document Number: 89363 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 2.5 A TA = 25 °C VF (1) 0.44 - V IF = 5.0 A 0.49 0.58 IF = 2.5 A TA = 125 °C 0.34 - IF = 5.0 A 0.41 0.50 Reverse current per diode VR = 45 V TA = 25 °C IR (2) - 500 μA TA = 125 °C 5 15 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT1045CBP UNIT Typical thermal resistance per diode RJC 3.5 °C/W per device 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1045CBP-M3/4W 1.87 4W 50/tube Tube 10 12 0 2 4 6 8 10 100 120 140 160 180 200 DC Forward Current at Thermal Equilibrium 0 100 Case Temperature (°C) DC Forward Current at Thermal Equilibrium 0 0.5 2.5 3.0 3.5 4.0 0123 56 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 4 D = t p/T t p T 1.0 1.5 2.0 |
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