Document Number: 89366

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Revision: 03-Nov-10

1

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

VT6045CBP

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

PRIMARY CHARACTERISTICS

2 x 30 A

45 V

320 A

0.47 V

150 °C

TO-220AB

VT6045CBP

1

2

3

PIN 1

PIN 2

CASE

PIN 3

TMBS

®

PARAMETER

SYMBOL

VT6045CBP

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current (fig. 1)

per device

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

320

A

Operating junction and storage temperature range

- 40 to + 150

°C

Junction temperature in DC forward current

without reverse bias, t

≤ 1 h

≤ 200

°C