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TPS28225-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS28225-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 34 page  TPS28225-Q1 TPS28226-Q1 SLUSAR9A – DECEMBER 2011 – REVISED MAY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (1) VDD = 7.2 V, EN/PG pulled up to VDD by 100-kΩ resistor, TA = –40°C to 105°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT UNDER VOLTAGE LOCKOUT Rising threshold (TPS28225-Q1) 3.2 3.5 3.8 Rising threshold (TPS28226-Q1) 6.35 6.70 VPWM = 0 V Falling threshold (TPS28225-Q1) 2.7 3.0 V Falling threshold (TPS28226-Q1) 4.7 5.0 Hysteresis (TPS28225-Q1) 0.5 Hysteresis (TPS28226-Q1) 1.00 1.35 BIAS CURRENTS IDD(off) Bias supply current VEN/PG = low, PWM pin floating 350 μA IDD Bias supply current VEN/PG = high, PWM pin floating 500 INPUT (PWM) VPWM = 5 V 185 IPWM Input current μA VPWM = 0 V –200 PWM 3-state rising threshold(2) 1.0 V PWM 3-state falling threshold VPWM PEAK = 5 V 3.4 3.8 4.0 tHLD_R 3-state shutdown Hold-off time 250 ns TMIN PWM minimum pulse to force UGATE pulse CL = 3 nF at UGATE , VPWM = 5 V 30 ENABLE/POWER GOOD (EN/PG) Enable high rising threshold PG FET OFF 1.7 2.1 Enable low falling threshold PG FET OFF 0.8 1.0 V Hysteresis 0.35 0.70 Power good output VDD = 2.5 V 0.2 UPPER GATE DRIVER OUTPUT (UGATE) Source resistance 500 mA source current 1.0 2.0 Ω Source current (2) VUGATE-PHASE = 2.5 V 2.0 A tRU Rise time CL = 3 nF 10 ns Sink resistance 500 mA sink current 1.0 2.0 Ω Sink current (2) VUGATE-PHASE = 2.5 V 2.0 A tFU Fall time CL = 3 nF 10 ns (1) Typical values for TA = 25°C (2) Not tested in production 6 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated Product Folder Link(s): TPS28225-Q1 TPS28226-Q1 |
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