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SST37VF512 Datasheet(PDF) 6 Page - Silicon Storage Technology, Inc |
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SST37VF512 Datasheet(HTML) 6 Page - Silicon Storage Technology, Inc |
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6 / 16 page  6 Data Sheet 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 ©2001 Silicon Storage Technology, Inc. S71151-02-000 5/01 397 TABLE 4: READ MODE DC OPERATING CHARACTERISTICS VDD=2.7-3.6V (Ta = 0°C to +70°C (Commercial)) Symbol Parameter Limits Test Conditions Min Max Units IDD VDD Read Current Address input=VIL/VIH, at f=1/TRC Min VDD=VDD Max 12 mA CE#=OE#=VIL, all I/Os open ISB Standby VDD Current 15 µA CE#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.3 V IOH=-100 µA, VDD=VDD Min IH Supervoltage Current for A9 for Read-ID 200 µA CE#=OE#=VIL, A9=VH Max T4.3 397 TABLE 5: PROGRAM/ERASE DC OPERATING CHARACTERISTICS VDD=2.7-3.6V (Ta = 25°C±5°C) Symbol Parameter Limits Test Conditions Min Max Units IDD VDD Erase or Program Current 20 mA CE#=VIL, OE#=VH, VDD=VDD Max, WE#=VIL ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VH Supervoltage for A9 and OE# 11.4 12.6 V IH Supervoltage Current for A9 and OE# 200 µA OE#=VH Max, A9=VH Max, VDD=VDD Max, CE# = VIL T5.1 397 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T6.1 397 TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.0 397 TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.3 397 |
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