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SST36VF1601-70-4C-EK Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST36VF1601-70-4C-EK Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 26 page 10 Data Sheet 16 Mbit Concurrent SuperFlash SST36VF1601 ©2001 Silicon Storage Technology, Inc. S71142-06-000 11/01 373 TABLE 6: SYSTEM INTERFACE INFORMATION Address Data Data 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min (00H = no VPP pin) 1EH 0000H VPP max (00H = no VPP pin) 1FH 0004H Typical time out for Word-Program 2N µs (24 = 16 µs) 20H 0000H Typical time out for min size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 24 = 32 µs) 24H 0000H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms) T6.0 373 TABLE 7: DEVICE GEOMETRY INFORMATION Address Data Data 27H 0015H Device size = 2N Bytes (15H = 21; 221 = 2 MByte) 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported) 2BH 0000H 2CH 0002H Number of Erase Sector/Block sizes supported by device 2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size) 2EH 0003H y = 1023 + 1 = 1024 sectors (03FFH = 1023) 2FH 0008H 30H 0000H z = 8 x 256 Bytes = 4 KByte/sector (0008H = 8) 31H 003FH Block Information (y + 1 = Number of blocks; z x 256B = block size) 32H 0000H y = 31 + 1 = 32 blocks (001FH = 31) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T7.3 373 |
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