Data Sheet

©2001 Silicon Storage Technology, Inc.

S71145-02-000

6/01

399

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

16 Mbit (x16) Multi-Purpose Flash

SST39LF160 / SST39VF160

FEATURES:

•

Organized as 1M x16

•

Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF160

– 2.7-3.6V for SST39VF160

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption

– Active Current: 15 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

•

Sector-Erase Capability

– Uniform 2 KWord sectors

•

Fast Read Access Time

– 55 ns for SST39LF160

– 70 and 90 ns for SST39VF160

•

Latched Address and Data

•

Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 15 seconds (typical) for

SST39LF/VF160

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST39LF/VF160 devices are 1M x16 CMOS Multi-

Purpose Flash (MPF) manufactured with SST’s proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF160 write (Program or

Erase) with a 3.0-3.6V power supply. The SST39VF160

write (Program or Erase) with a 2.7-3.6V power supply.

These devices conform to JEDEC standard pinouts for x16

memories.

Featuring high performance Word-Program, the SST39LF/

VF160 devices provide a typical Word-Program time of 14

µsec.These devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

The SST39LF/VF160 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39LF/VF160 are offered in 48-lead TSOP and 48-ball

TFBGA packages. See Figure 1 for pinouts.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories