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SST37VF512-90-3C-NH Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST37VF512-90-3C-NH Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 16 page ©2001 Silicon Storage Technology, Inc. S71151-02-000 5/01 397 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • 2.7-3.6V Read Operation • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 2 µA (typical) • Fast Read Access Time: – 70 ns – 90 ns • Latched Address and Data • Fast Byte-Program Operation: – Byte-Program Time: 10 µs (typical) – Chip Program Time: 0.6 seconds (typical) for SST37VF512 1.2 seconds (typical) for SST37VF010 2.4 seconds (typical) for SST37VF020 4.8 seconds (typical) for SST37VF040 • Electrical Erase Using Programmer – Does not require UV source – Chip-Erase Time: 100 ms (typical) • CMOS I/O Compatibility • JEDEC Standard Byte-wide Flash EEPROM Pinouts • Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST37VF512/010/020/040 devices are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable (MTP), low cost flash, manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST37VF512/010/020/040 can be electrically erased and programmed at least 1000 times using an external programmer, e.g., to change the contents of devices in inventory. The SST37VF512/010/020/040 have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide flash memories. Featuring high performance Byte-Program, the SST37VF512/010/020/040 provide a typical Byte-Pro- gram time of 10 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST37VF512/010/020/040 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. To meet surface mount and conventional through hole requirements, the SST37VF512/010/020/040 are offered in 32-pin PLCC, TSOP, and PDIP packages. See Figures 1, 2, and 3 for pinouts. Device Operation The SST37VF512/010/020/040 devices are nonvolatile memory solutions that can be used instead of standard flash devices if in-system programmability is not required. It is functionally (Read) and pin compatible with industry standard flash products.The device supports electrical Erase operation via an external programmer. Read The Read operation of the SST37VF512/010/020/040 is controlled by CE# and OE#. Both CE# and OE# have to be low for the system to obtain data from the outputs. Once the address is stable, the address access time is equal to the delay from CE# to output (TCE). Data is available at the output after a delay of TOE from the falling edge of OE#, assuming the CE# pin has been low and the addresses have been stable for at least TCE - TOE. When the CE# pin is high, the chip is deselected and a standby current of only 10 µA (typical) is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is VIH. Refer to Figure 4 for the timing diagram. SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories |
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