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ISL706CEH Datasheet(PDF) 10 Page - Intersil Corporation

Part # ISL706CEH
Description  Rad-Hard, 5.0V/3.3V 關-Processor Supervisory Circuits
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL706CEH Datasheet(HTML) 10 Page - Intersil Corporation

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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
10
FN8262.0
March 30, 2012
FIGURE 16. ISL705xEH VHYS vs LOW DOSE RATE RADIATION
FIGURE 17. ISL705xEH tRST vs LOW DOSE RATE RADIATION
FIGURE 18. ISL705xEH tWD vs LOW DOSE RATE RADIATION
FIGURE 19. ISL705xEH tMD vs LOW DOSE RATE RADIATION
FIGURE 20. ISL705xEH VPFI vs LOW DOSE RATE RADIATION
FIGURE 21. ISL705xEH tRPFI vs LOW DOSE RATE RADIATION
Post Radiation Characteristics Unless otherwise specified, VDD = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, VDD = 3.15V to 3.6V
for the ISL706AEH/BEH/CEH TA = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
0
10
20
30
40
50
60
70
80
90
100
0
255075
100
125
150
krad(Si)
BIASED
GROUNDED
120
140
160
180
200
220
240
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
20
25
30
35
40
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
1.000
1.125
1.250
1.375
1.500
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
0
2
4
6
8
10
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED


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