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SST29VE010-200-4I-NH Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST29VE010-200-4I-NH Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 26 page 10 Data Sheet 1 Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 ©2001 Silicon Storage Technology, Inc. S71061-07-000 6/01 304 AC CHARACTERISTICS TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE010 Symbol Parameter SST29EE010-70 SST29EE010-90 Units MinMax MinMax TRC Read Cycle Time 70 90 ns TCE Chip Enable Access Time 70 90 ns TAA Address Access Time 70 90 ns TOE Output Enable Access Time 30 40 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 20 30 ns TOHZ1 OE# High to High-Z Output 20 30 ns TOH1 Output Hold from Address Change 0 0 ns T10.2 304 TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE010 Symbol Parameter SST29LE010-150 SST29LE010-200 Units MinMax MinMax TRC Read Cycle Time 150 200 ns TCE Chip Enable Access Time 150 200 ns TAA Address Access Time 150 200 ns TOE Output Enable Access Time 60 100 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 30 50 ns TOHZ1 OE# High to High-Z Output 30 50 ns TOH1 Output Hold from Address Change 0 0 ns T11.1 304 TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE010 Symbol Parameter SST29VE010-200 SST29VE010-250 Units MinMax MinMax TRC Read Cycle Time 200 250 ns TCE Chip Enable Access Time 200 250 ns TAA Address Access Time 200 250 ns TOE Output Enable Access Time 100 120 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 50 50 ns TOHZ1 OE# High to High-Z Output 50 50 ns TOH1 Output Hold from Address Change 0 0 ns T12.1 304 |
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