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SST39SF010-70-4I-NH Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39SF010-70-4I-NH Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 22 page ©2001 Silicon Storage Technology, Inc. S71149-03-000 4/01 394 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash SST39SF512 / SST39SF010 FEATURES: • Organized as 64K x8 / 128K x8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 70 ns – 90 ns • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 7 ms (typical) – Chip-Erase Time: 15 ms (typical) – Byte-Program Time: 20 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST39SF512/010 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high perfor- mance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reli- ability and manufacturability compared with alternate approaches. The SST39SF512/010 devices write (Pro- gram or Erase) with a 5.0V-only power supply. The SST39SF512/010 device conforms to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF512/010 devices provide a maximum Byte-Pro- gram time of 30 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program opera- tion. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39SF512/010 devices are suited for applications that require convenient and economical updating of pro- gram, configuration, or data memory. For all system appli- cations, they significantly improve performance and reliability, while lowering power consumption. They inher- ently use less energy during erase and program than alter- native flash technologies. The total energy consumed is a function of the applied voltage, current, and time of applica- tion. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technolo- gies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage appli- cations. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. To meet high density, surface mount requirements, the SST39SF512/010 are offered in 32-pin PLCC packages, 32-pin TSOP, and a 600 mil, 32-pin PDIP is also available. See Figures 1, 2, and 3 for pinouts. Device Operation Commands are used to initiate the memory operation func- tions of the device. Commands are written to the device using standard microprocessor write sequences. A com- mand is written by asserting WE# low while keeping CE# SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories |
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