BT137-600D datasheet(6/13 Pages) NXP

Part #	BT137-600D

Description	Direct triggering from low power drivers and logic ICs

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Manufacturer	NXP [NXP Semiconductors]

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BT137-600D

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Product data sheet

Rev. 3 — 24 March 2011

6 of 13

NXP Semiconductors

BT137-600D

4Q Triac

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+;

Tj =25°C; see Figure 7

-2.5

5

mA

VD =12V; IT = 0.1 A; T2+ G-;

Tj =25°C; see Figure 7

-3.5

5

mA

VD =12V; IT = 0.1 A; T2- G-;

Tj =25°C; see Figure 7

-3.5

5

mA

VD =12V; IT = 0.1 A; T2- G+;

Tj =25°C; see Figure 7

-6.5

10

mA

IL

latching current

VD =12V; IG = 0.1 A; T2+ G+;

Tj =25°C; see Figure 8

-1.6

15

mA

VD =12V; IG = 0.1 A; T2+ G-;

Tj =25°C; see Figure 8

-8.5

20

mA

VD =12V; IG = 0.1 A; T2- G-;

Tj =25°C; see Figure 8

-1.2

15

mA

VD =12V; IG = 0.1 A; T2- G+;

Tj =25°C; see Figure 8

-2.5

20

mA

IH

holding current

VD =12V; Tj =25 °C; see Figure 9

-1.5

10

mA

VT

on-state voltage

IT =10A; Tj = 25 °C; see Figure 10

-

1.3

1.65

V

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25°C;

see Figure 11

-0.7

1.5

V

VD =400 V; IT = 0.1 A; Tj =125 °C;

see Figure 11

0.25

0.4

-

V

ID

off-state current

VD =600 V; Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =402 V; Tj =125 °C; RGT1 =1kΩ;

exponential waveform; gate open circuit

-5

-V/µs

tgt

gate-controlled turn-on

time

ITM =12A; VD = 600 V; IG = 0.1 mA;

dIG/dt = 5 A/µs

-2

-µs

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