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SST27SF512-90-3C-WG Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST27SF512-90-3C-WG Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 26 page ©2001 Silicon Storage Technology, Inc. S71152-02-000 5/01 502 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020 FEATURES: • Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8 • 4.5-5.5V Read Operation • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) • Fast Read Access Time – 70 ns – 90 ns • Fast Byte-Program Operation – Byte-Program Time: 20 µs (typical) – Chip Program Time: 0.7 seconds (typical) for SST27SF256 1.4 seconds (typical) for SST27SF512 2.8 seconds (typical) for SST27SF010 5.6 seconds (typical) for SST27SF020 • Electrical Erase Using Programmer – Does not require UV source – Chip-Erase Time: 100 ms (typical) • TTL I/O Compatibility • JEDEC Standard Byte-wide EPROM Pinouts • Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 28-pin PDIP for SST27SF256/512 – 32-pin PDIP for SST27SF010/020 PRODUCT DESCRIPTION The SST27SF256/512/010/020 are a 32K x8 / 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST’s proprietary, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external pro- grammer with a 12 volt power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Byte-Program, the SST27SF256/512/010/020 provide a Byte-Program time of 20 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF256/512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. To meet surface mount and conventional through hole requirements, the SST27SF256/512 are offered in 32-pin PLCC, 32-pin TSOP, and 28-pin PDIP packages. The SST27SF010/020 are offered in 32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages. See Figures 1, 2, and 3 for pinouts. Device Operation The SST27SF256/512/010/020 are a low cost flash solu- tion that can be used to replace existing UV-EPROM, OTP, and mask ROM sockets. These devices are functionally (read and program) and pin compatible with industry stan- dard EPROM products. In addition to EPROM functionality, these devices also support electrical erase operation via an external programmer. They do not require a UV source to erase, and therefore the packages do not have a window. Read The Read operation of the SST27SF256/512/010/020 is controlled by CE# and OE#. Both CE# and OE# have to be low for the system to obtain data from the outputs. Once the address is stable, the address access time is equal to the delay from CE# to output (TCE). Data is available at the output after a delay of TOE from the falling edge of OE#, assuming that CE# pin has been low and the addresses have been stable for at least TCE - TOE. When the CE# pin is high, the chip is deselected and a typical standby current of 10 µA is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Byte-Program Operation The SST27SF256/512/010/020 are programmed by using an external programmer. The programming mode for SST27SF256/010/020 is activated by asserting 12V (±5%) SST27SF256 / 512 / 010 / 0205.0V-Read 256Kb / 512Kb / 1Mb / 2Mb (x8) MTP flash memories |
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