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SST29SF020-70-4C-WH Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST29SF020-70-4C-WH Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 24 page 10 Preliminary Specifications 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040 ©2001 Silicon Storage Technology, Inc. S71160-05-000 5/01 505 AC CHARACTERISTICS TABLE 10: READ CYCLE TIMING PARAMETERS VDD = 5V±10% FOR SST29SFXXX AND 2.7-3.6V FOR SST29VFXXX Symbol Parameter SST29SF/VFxxx-55 SST29SF/VFxxx-70 Units Min Max Min Max TRC Read Cycle Time 55 70 ns TCE Chip Enable Access Time 55 70 ns TAA Address Access Time 55 70 ns TOE Output Enable Access Time 30 35 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 20 25 ns TOHZ1 OE# High to High-Z Output 20 25 ns TOH1 Output Hold from Address Change 00 ns T10.5 505 TABLE 11: PROGRAM/ERASE CYCLE TIMING PARAMETERS VDD = 5V±10%V FOR SST29SFXXX AND 2.7-3.6V FOR SST29VFXXX Symbol Parameter Min Max Units TBP Byte-Program Time 20 µs TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 40 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time 150 ns TSE Sector-Erase 25 ms TSCE Chip-Erase 100 ms T11.6 505 |
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