Description

The 3SK166A is an N-channel dual gate GaAs

MES FET for UHF band low-noise amplification. The

circuit matching is easier to be made for all UHF

band, resulting in the excellent performance, due to

the optimal design of input impedance.

Features

• Low voltage operation

• Low noise: NF = 1.2dB (typ.) at 800MHz

• High gain: Ga = 20dB (typ) at 800MHz

• High stability

Application

UHF band amplifier, oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

8V

• Gate 1 to source voltage

–6

V

• Gate 2 to source voltage

–6

V

• Drain current

80

mA

• Allowable power dissipation

150

mW

• Channel temperature

Tch

150

°C

• Storage temperature

Tstg

–55 to +150

°C

– 1 –

3SK166A

E96Y11-PS

GaAs N-channel Dual Gate MES FET

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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