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KTD1530 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1530
Description  TRIPLE DIFFUSED NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2012. 8. 21
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1530
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER
DARLINGTON TRANSISTOR.
FEATURES
・Complementary to KTB2530.
・Recommended for 80W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25
℃)
TO-3P(N)-E
K
A
D
B
d
PP
T
Q
1
2
3
M
N
O
E
A
MILLIMETERS
DIM
B
C
D
d
E
F
G
H
I
J
K
L
O
N
P
Q
M
19.90
0.20
2.00
0.20
1.00
0.20
3.00
0.20
3.80
0.20
3.50
0.20
13.90
0.20
12.76
0.20
23.40
0.20
1.5+0.15-0.05
16.50
0.30
1.40
0.20
13.60
0.20
9.60
0.20
5.45
0.30
R
T
0.60+0.15-0.05
15.60
0.20
+
_
4.80
0.20
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
3.20
0.10
+
_
18.70
0.20
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=160V, IE=0
-
-
100
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
100
μA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=30mA, IB=0
150
-
-
V
DC Current Gain
hFE
VCE=4V, IC=7A
15,000
-
30,000
Collector-Emitter Saturation Voltage
VCE(sat)
IC=7A, IB=7mA
-
-
2.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=7A, IB=7mA
-
-
3.0
V
Transition Frequency
fT
VCE=12V, IC=2A
-
50
-
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
-
230
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
10
A
Base Current
IB
1
A
Collector PowerDissipation (Tc=25
℃)
PC
100
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
~150
COLLECTOR
EMITTER
70
EQUIVALENT CIRCUIT
BASE




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