TMS465169, TMS465169P

4194304 BY 16BIT EXTENDED DATA OUT

DYNAMIC RANDOMACCESS MEMORIES

SMHS566B − JUNE 1997 − REVISED APRIL 1998

11

POST OFFICE BOX 1443

timing requirements over recommended ranges of supply voltage and operating free-air

temperature (see Note 4) (continued)

’465169/P - 50

’465169/P - 60

UNIT

MIN

MAX

MIN

MAX

UNIT

tOED

Delay time, OE to data in

13

15

ns

tRAD

Delay time, RAS to column address (see Note 11)

10

25

12

30

ns

tRAL

Delay time, column address to RAS precharge

25

30

ns

tCAL

Delay time, column address to xCAS precharge

15

18

ns

tRCD

Delay time, RAS to xCAS (see Note 11)

12

37

14

45

ns

tRPC

Delay time, RAS precharge to xCAS

5

5

ns

tRSH

Delay time, xCAS active to RAS precharge

8

10

ns

tRWD

Delay time, RAS active to write command (read-write only)

67

79

ns

tCPW

Delay time, xCAS precharge to write command (read-write only)

45

54

ns

tRASS

Pulse duration, RAS active, self-refresh (see Note 12)

100

100

µs

tRPS

Pulse duration, RAS precharge after self refresh

90

110

ns

tREF

Refresh time interval

’465169

64

64

ms

tREF

Refresh time interval

’465169P

128

128

ms

tT

Transition time

1

50

1

50

ns

NOTES:

4. With ac parameters, it is assumed that tT = 2 ns.

11. The maximum value is specified only to assure access time.

12. During the period of 10

µs ≤ tRASS ≤ 100 µs, the device is in transition state from normal operational mode to self-refresh mode.