TM124GU8A

1 048 576-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULE

SMMS181A–JANUARY 1991–REVISED JANUARY 1993

POST OFFICE BOX 1443

4

recommended operating conditions

MIN

NOM

MAX

UNIT

VCC

Supply voltage

4.5

5

5.5

V

VIH

High-level input voltage

2.4

6.5

V

VIL

Low-level input voltage (see Note 2)

– 1

0.8

V

TA

Operating free-air temperature

0

70

°C

NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic

voltage levels only.

electrical characteristics over full ranges of recommended operating conditions (unless otherwise

noted)

PARAMETER

TEST CONDITIONS

TM124GU8A-60

TM124GU8A-70

TM124GU8A-80

UINT

PARAMETER

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

UINT

VOH High-level output voltage

IOH = – 5 mA

2.4

2.4

2.4

V

VOL

Low-level output voltage

IOL = 4.2 mA

0.4

0.4

0.4

V

II

Input current (leakage)

VI = 0 to 6.5 V, VCC = 5.5 V,

All other pins = 0 V to VCC

±10

±10

±10

µA

IO

Output current (leakage)

VO = 0 to VCC,

VCC = 5.5 V, CAS high

±10

±10

±10

µA

ICC1

Read or write cycle current

(see Note 3)

Minimum cycle, VCC = 5.5 V

210

180

160

mA

ICC2 Standby Current

After 1 memory cycle,

RAS and CAS high,

VIH = 2.4 V (TTL)

4

4

4

mA

ICC2 Standby Current

After 1 memory cycle,

RAS and CAS high,

VIH = VCC – 0.2 V (CMOS)

2

2

2

mA

ICC3

Average refresh current

(see Note 3)

Minimum cycle, VCC= 5.5 V,

RAS cycling, CAS high

210

180

160

mA

ICC4

Average page current

(see Note 4)

tc(P) = minimum, VCC = 5.5 V,

RAS low, CAS cycling

180

160

140

mA

NOTES:

3. Measured with a maximum of one address change while RAS = VIL.

4. Measured with a maximum of one address change while CAS = VIH.