TM497FBK32R, TM497FBK32G 4194304 BY 32-BIT

TM893GBK32R, TM893GBK32G 8388608 BY 32-BIT

EXTENDED DATA OUT DYNAMIC RAM MODULES

SMMS672 – FEBRUARY 1997

1

POST OFFICE BOX 1443

– TM497FBK32R/G: 4 194 304 x 32

– TM893GBK32R/G: 8 388 608 x 32

(SIMM) for Use With Sockets

Dynamic Random-Access Memories

(DRAMs) in Plastic Small-Outline J-Lead

(SOJ) Packages

DRAMs in Plastic SOJ Packages

32 ms (2 048 Cycles)

TTL-Compatible

Data-In and Data-Out Lines in Four Blocks

CAS-Before-RAS ( CBR ), RAS-Only, and

Hidden Refresh

ACCESS

ACCESS ACCESS

EDO

TIME

TIME

TIME

CYCLE

tRAC

tAA

tCAC

tHPC

(MAX)

(MAX)

(MAX)

(MIN)

’497FBK32R/G-50 50 ns

40 ns

20 ns

35 ns

’497FBK32R/G-60 60 ns

30 ns

15 ns

25 ns

’497FBK32R/G-70 70 ns

35 ns

18 ns

30 ns

’893GBK32R/G-50 50 ns

40 ns

20 ns

35 ns

’893GBK32R/G-60 60 ns

30 ns

15 ns

25 ns

’893GBK32R/G-70 70 ns

35 ns

18 ns

30 ns

0

°C to 70°C

TM497FBK32G, TM893GBK32G

Available: TM497FBK32R, TM893GBK32R

description

The TM497FBK32R/G, designed as 4

× 4 194304 × 8-bits, is a 16M-byte, 72-pin, leadless, single-in-line

memory module (SIMM). The SIMM is composed of eight (8) TMS417409DJs, 4 194 304

× 4-bit DRAMs, each

in 24/26-lead, plastic, small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors.

See the TMS417409A data sheet (literature number SMKS893) for timing diagrams.

The TM497FBK32R/G SIMM is available in the single-sided BK leadless module for use with sockets. The

TM497FBK32R/G features RAS access times of 50, 60, and 70 ns. This device is designed for operation from

0

°C to 70°C.

The TM893GBK32R/G, designed as 4

× 8 388608 × 8-bits, is a 32M-byte, 72-pin, leadless SIMM. The SIMM

is composed of sixteen TMS417409DJs, 4 194 304

× 4-bit DRAMs, each in 24/26-lead, plastic, small-outline

J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. See the TMS417409A data sheet

(literature number SMKS893) for timing diagrams.

The TM893GBK32R/G SIMM is available in the double-sided BK leadless module for use with sockets. The

TM893GBK32R/G features RAS access times of 50, 60, and 70 ns. This device is characterized for operation

from 0

°C to 70°C.

operation

The TM497FBK32R / G operates as eight TMS417409DJs connected as shown in the functional block diagram

of TM497RBK32R/G and in Table 1. The common I/O feature dictates the use of early write cycles to prevent

contention on D and Q.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

† Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

Copyright

© 1997, Texas Instruments Incorporated