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TM893GBK32I-60 Datasheet(PDF) 8 Page - Texas Instruments |
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TM893GBK32I-60 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 13 page TM497FBK32H, TM497FBK32I 4194304 BY 32BIT TM893GBK32H, TM893GBK32I 8388608 BY 32BIT EXTENDEDDATAOUT DYNAMIC RAM MODULES SMMS674A − MARCH 1997 − REVISED SEPTEMBER 1997 8 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 switching characteristics over recommended ranges of supply voltage and operating free-air temperature (see Note 7) PARAMETER ’497FBK32H / I-50 ’893GBK32H / I-50 ’497FBK32H / I-60 ’893GBK32H / I-60 ’497FBK32H / I-70 ’893GBK32H / I-70 UNIT PARAMETER MIN MAX MIN MAX MIN MAX UNIT tAA Access time from column address 25 30 35 ns tCAC Access time from CAS low 13 15 18 ns tCPA Access time from column precharge 28 35 40 ns tRAC Access time from RAS low 50 60 70 ns tCLZ CAS to output in low-impedance state 0 0 0 ns tREZ Output buffer turn off delay from RAS (see Note 6) 3 13 3 15 3 18 ns tCEZ Output buffer turn off delay from CAS (see Note 6) 3 13 3 15 3 18 ns tWEZ Output buffer turn off delay from W (see Note 6) 3 13 3 15 3 18 ns NOTES: 6. The maximum values of tREZ, tCEZ, and tWEZ are specified when the output is no longer driven. Data in should not be driven until one of the applicable maximum specifications is satisfied. 7. All cycles assume tT = 2 ns. EDO timing requirements over recommended ranges of supply voltage and operating free-air temperature (see Note 7) ’497FBK32H / I-50 ’893GBK32H / I-50 ’497FBK32H / I-60 ’893GBK32H / I-60 ’497FBK32H / I-70 ’893GBK32H / I-70 UNIT MIN MAX MIN MAX MIN MAX UNIT tHPC Cycle time, EDO page mode read or write 20 25 30 ns tPRWC Cycle time, EDO read-write 57 68 78 ns tCSH Hold time, CAS after RAS 40 48 58 ns tDOH Hold time, output after RAS 5 5 5 ns tCAS Pulse duration, CAS 8 10 000 10 10 000 12 10 000 ns tWPE Pulse duration, W (output disable only) 7 7 7 ns tCP Precharge time, CAS 8 10 10 ns NOTE 7. All cycles assume tT = 2 ns. |
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